SMIRF8N65T1TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMIRF8N65T1TL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 152 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO220
SMIRF8N65T1TL Datasheet (PDF)
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Otros transistores... SMIRF5N65T2TL , SMIRF5N65TBRL , SMIRF5N65T9TL , SMIRF7N65T1TL , SMIRF7N65T2TL , SMIRF7N65T9RL , SMIRF8N60T1TL , SMIRF8N60T2TL , IRF640 , SMIRF8N65T2TL , 2SK2941 , 2SK2949L , 2SK2949S , 2SK2954-MR , 2SK296 , 2SK2991L , 2SK2991S .
History: G16
History: G16



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