SMIRF8N65T1TL Todos los transistores

 

SMIRF8N65T1TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SMIRF8N65T1TL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 152 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220
 
   - Selección ⓘ de transistores por parámetros

 

SMIRF8N65T1TL Datasheet (PDF)

 5.1. Size:1406K  cn sps
 smirf8n65.pdf pdf_icon

SMIRF8N65T1TL

SMIRF8N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2(VGS=10V, ID=4A) on-state resistance, provide superior switchi

 6.1. Size:1247K  cn sps
 smirf8n60.pdf pdf_icon

SMIRF8N65T1TL

SMIRF8N6030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2(VGS=10V, ID=4A) on-state resistance, provide superior switchi

 9.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF8N65T1TL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF8N65T1TL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

MOSTRAR MÁS

Otros transistores... SMIRF5N65T2TL , SMIRF5N65TBRL , SMIRF5N65T9TL , SMIRF7N65T1TL , SMIRF7N65T2TL , SMIRF7N65T9RL , SMIRF8N60T1TL , SMIRF8N60T2TL , IRF640 , SMIRF8N65T2TL , 2SK2941 , 2SK2949L , 2SK2949S , 2SK2954-MR , 2SK296 , 2SK2991L , 2SK2991S .

History: G16

 

 
Back to Top

 


 
.