SMIRF8N65T1TL Datasheet. Specs and Replacement

Type Designator: SMIRF8N65T1TL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 152 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220

SMIRF8N65T1TL substitution

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SMIRF8N65T1TL datasheet

 5.1. Size:1406K  cn sps
 smirf8n65.pdf pdf_icon

SMIRF8N65T1TL

SMIRF8N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2 (VGS=10V, ID=4A) on-state resistance, provide superior switchi... See More ⇒

 6.1. Size:1247K  cn sps
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SMIRF8N65T1TL

SMIRF8N60 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2 (VGS=10V, ID=4A) on-state resistance, provide superior switchi... See More ⇒

 9.1. Size:1604K  cn sps
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SMIRF8N65T1TL

SMIRF16N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6 (VGS=10V, ID=8A) on-state resistance, provide superior ... See More ⇒

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF8N65T1TL

SMIRF12N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75 (VGS=10V, ID=6A) on-state resistance, provide superior... See More ⇒

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Detailed specifications: SMIRF5N65T2TL, SMIRF5N65TBRL, SMIRF5N65T9TL, SMIRF7N65T1TL, SMIRF7N65T2TL, SMIRF7N65T9RL, SMIRF8N60T1TL, SMIRF8N60T2TL, IRFP460, SMIRF8N65T2TL, 2SK2941, 2SK2949L, 2SK2949S, 2SK2954-MR, 2SK296, 2SK2991L, 2SK2991S

Keywords - SMIRF8N65T1TL MOSFET specs

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