2SK3399K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3399K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 100 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Resistencia entre drenaje y fuente RDS(on): 0.75 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de MOSFET 2SK3399K
2SK3399K Datasheet (PDF)
2sk3399k.pdf
isc N-Channel MOSFET Transistor 2SK3399KFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3399.pdf
2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3399 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ) High forward transfer admittance: |Yfs| = 5.2 S (typ) Low leakage current: IDSS = 100 A (max) (VDSS = 600 V) Enhancementmode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute M
2sk3399b.pdf
isc N-Channel MOSFET Transistor 2SK3399BFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3398.pdf
2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3398 Switching Regulator and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 0.4 m (typ.) High forward transfer admittance: |Yfs| = 9.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement-mode: Vth
2sk3397.pdf
2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3397 Relay Drive and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.0 m (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 3.0 V (V
2sk3391.pdf
2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, add = 58% min. (f = 836 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-AR(Package Name : UPAK )3121. Gate31 2. Source3. Drain4. S
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
