All MOSFET. 2SK3399K Datasheet

 

2SK3399K Datasheet and Replacement


   Type Designator: 2SK3399K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO262
 

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2SK3399K Datasheet (PDF)

 ..1. Size:282K  inchange semiconductor
2sk3399k.pdf pdf_icon

2SK3399K

isc N-Channel MOSFET Transistor 2SK3399KFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 7.1. Size:220K  toshiba
2sk3399.pdf pdf_icon

2SK3399K

2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3399 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ) High forward transfer admittance: |Yfs| = 5.2 S (typ) Low leakage current: IDSS = 100 A (max) (VDSS = 600 V) Enhancementmode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 7.2. Size:356K  inchange semiconductor
2sk3399b.pdf pdf_icon

2SK3399K

isc N-Channel MOSFET Transistor 2SK3399BFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.1. Size:190K  toshiba
2sk3398.pdf pdf_icon

2SK3399K

2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3398 Switching Regulator and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 0.4 m (typ.) High forward transfer admittance: |Yfs| = 9.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement-mode: Vth

Datasheet: 2SK3325-S , 2SK3325-ZJ , 2SK3352 , 2SK3352B , 2SK3352K , 2SK3355-S , 2SK3355-ZJ , 2SK3399B , IRFB3607 , 2SK3820B , 2SK3820K , 2SK3821B , 2SK3821K , 2SK3822 , 2SK3822B , 2SK3822K , 2SK3825 .

History: PSMN1R5-40YSD

Keywords - 2SK3399K MOSFET datasheet

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