2SK3850I Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3850I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 18.5 Ohm

Encapsulados: TO251

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2SK3850I datasheet

 ..1. Size:354K  inchange semiconductor
 2sk3850i.pdf pdf_icon

2SK3850I

isc N-Channel MOSFET Transistor 2SK3850I FEATURES Drain Current I = 0.7A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 18.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 7.1. Size:36K  sanyo
 2sk3850.pdf pdf_icon

2SK3850I

Ordering number ENN8193 2SK3850 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3850 Applications Features Best suited for motor drive. Low ON-resistance. Low Qg. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 0.7 A D

 7.2. Size:286K  inchange semiconductor
 2sk3850d.pdf pdf_icon

2SK3850I

isc N-Channel MOSFET Transistor 2SK3850D FEATURES Drain Current I = 0.7A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 18.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.1. Size:129K  toshiba
 2sk3857tk.pdf pdf_icon

2SK3850I

2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 3 Characteristic Symbol Rating Unit 2 Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Storag

MOSTRAR MÁS

Otros transistores... 2SK3828, 2SK3831, 2SK3834, 2SK3847B, 2SK3847K, 2SK384L, 2SK384S, 2SK3850D, 4N60, YTF440, YTF450, YTF531, YTF540, YTF541, YTF630, YTF631, YTF640