2SK3850I Datasheet PDF and Equivalents Search

 ..1. Size:354K  inchange semiconductor
 2sk3850i.pdf

isc N-Channel MOSFET Transistor 2SK3850I FEATURES Drain Current I = 0.7A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 18.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 7.1. Size:36K  sanyo
 2sk3850.pdf

Ordering number ENN8193 2SK3850 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3850 Applications Features Best suited for motor drive. Low ON-resistance. Low Qg. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 0.7 A D... See More ⇒

 7.2. Size:286K  inchange semiconductor
 2sk3850d.pdf

isc N-Channel MOSFET Transistor 2SK3850D FEATURES Drain Current I = 0.7A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 18.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 8.1. Size:129K  toshiba
 2sk3857tk.pdf

2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 3 Characteristic Symbol Rating Unit 2 Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Storag... See More ⇒

 8.2. Size:148K  toshiba
 2sk3857tv.pdf

2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Stora... See More ⇒

 8.3. Size:41K  no
 2sk385.pdf

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 8.4. Size:233K  inchange semiconductor
 2sk385.pdf

isc N-Channel MOSFET Transistor 2SK385 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage,high speed power Switching. Low leakage Current. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE ... See More ⇒