FCI7N60 Todos los transistores

 

FCI7N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCI7N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO262 I2PAK

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FCI7N60 datasheet

 ..1. Size:932K  fairchild semi
 fci7n60.pdf pdf_icon

FCI7N60

December 2008 TM SuperFET FCI7N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.53 balance mechanism for outstanding low on-resistance and Ultra Low Gate Charge (typ. Qg = 25nC) lower gate charge performance.

 ..2. Size:441K  onsemi
 fci7n60.pdf pdf_icon

FCI7N60

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FCH47N60NF , STU630S , FCH76N60N , STU624S , FCH76N60NF , STU622S , FCI25N60NF102 , STU618S , IRF1010E , STU616S , FCP11N60F , STU612D , FCP11N60N , STU610S , FCP13N60N , STU609S , FCP16N60N .

 

 

 


 
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