FCI7N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCI7N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO262 I2PAK
- Selección de transistores por parámetros
FCI7N60 Datasheet (PDF)
fci7n60.pdf

December 2008 TMSuperFETFCI7N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.53balance mechanism for outstanding low on-resistance and Ultra Low Gate Charge (typ. Qg = 25nC) lower gate charge performance.
fci7n60.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FK30SM-5 | SIHF10N40D | SI2202 | MTP3N35 | SL4813A | P3506DD
History: FK30SM-5 | SIHF10N40D | SI2202 | MTP3N35 | SL4813A | P3506DD



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