All MOSFET. FCI7N60 Datasheet

 

FCI7N60 Datasheet and Replacement


   Type Designator: FCI7N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO262 I2PAK
 

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FCI7N60 Datasheet (PDF)

 ..1. Size:932K  fairchild semi
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FCI7N60

December 2008 TMSuperFETFCI7N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.53balance mechanism for outstanding low on-resistance and Ultra Low Gate Charge (typ. Qg = 25nC) lower gate charge performance.

 ..2. Size:441K  onsemi
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FCI7N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FCH47N60NF , STU630S , FCH76N60N , STU624S , FCH76N60NF , STU622S , FCI25N60NF102 , STU618S , IRFP250 , STU616S , FCP11N60F , STU612D , FCP11N60N , STU610S , FCP13N60N , STU609S , FCP16N60N .

History: DMB53D0UDW | IRFBG30 | STU15N20

Keywords - FCI7N60 MOSFET datasheet

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