FCI7N60 Datasheet. Specs and Replacement

Type Designator: FCI7N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO262 I2PAK

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FCI7N60 datasheet

 ..1. Size:932K  fairchild semi
fci7n60.pdf pdf_icon

FCI7N60

December 2008 TM SuperFET FCI7N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.53 balance mechanism for outstanding low on-resistance and Ultra Low Gate Charge (typ. Qg = 25nC) lower gate charge performance. ... See More ⇒

 ..2. Size:441K  onsemi
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FCI7N60

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FCH47N60NF, STU630S, FCH76N60N, STU624S, FCH76N60NF, STU622S, FCI25N60NF102, STU618S, IRF1010E, STU616S, FCP11N60F, STU612D, FCP11N60N, STU610S, FCP13N60N, STU609S, FCP16N60N

Keywords - FCI7N60 MOSFET specs

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