2SK4075B Todos los transistores

 ..1. Size:287K  inchange semiconductor
 2sk4075b.pdf

isc N-Channel MOSFET Transistor 2SK4075B FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 7.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 0.1. Size:283K  renesas
 2sk4075b-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:162K  nec
 2sk4075.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4075-ZK-E1-AY Pure Sn (Tin) Tape TO-252 (MP-3ZK) 2500 p/reel typ. 0.27 g 2SK4075-ZK-E2-AY FEATURES (TO-252) Low on-state resis

 7.2. Size:162K  nec
 2sk4075-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4075-ZK-E1-AY Pure Sn (Tin) Tape TO-252 (MP-3ZK) 2500 p/reel typ. 0.27 g 2SK4075-ZK-E2-AY FEATURES (TO-252) Low on-state resis