2SK4075B Datasheet and Replacement

isc N-Channel MOSFET Transistor 2SK4075BFEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 7.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK4075SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4075-ZK-E1-AY Pure Sn (Tin) Tape TO-252 (MP-3ZK) 2500 p/reel typ. 0.27 g 2SK4075-ZK-E2-AY FEATURES (TO-252) Low on-state resis

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK4075SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4075-ZK-E1-AY Pure Sn (Tin) Tape TO-252 (MP-3ZK) 2500 p/reel typ. 0.27 g 2SK4075-ZK-E2-AY FEATURES (TO-252) Low on-state resis