AOD522 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOD522
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 525 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007(typ) Ohm
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
AOD522 Datasheet (PDF)
aod522.pdf

AOD522www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLUT
aod526.pdf

AOD52630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
aod528.pdf

AOD52830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
aod526.pdf

isc N-Channel MOSFET Transistor AOD526FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: IXTP50N28T | 3SK249
History: IXTP50N28T | 3SK249



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