AOD522 MOSFET Datasheet: N-Ch, 30V, 50A. Full specification with pinout and replacement list

AOD522 Specs and Replacement

Type Designator: AOD522

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 525 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 typ Ohm

Package: TO252

AOD522 substitution

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AOD522 datasheet

..1. Size:841K cn vbsemi
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AOD522 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLUT... See More ⇒

9.1. Size:392K aosemi
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AOD526 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

9.2. Size:376K aosemi
aod528.pdf pdf_icon

AOD528 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

9.3. Size:265K inchange semiconductor
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isc N-Channel MOSFET Transistor AOD526 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 5.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒