AP2309AGN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2309AGN
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Paquete / Cubierta: SOT23
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AP2309AGN Datasheet (PDF)
ap2309agn.pdf

AP2309AGNwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2
ap2309agn-hf.pdf

AP2309AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75mD Surface Mount Device ID - 3.4A RoHS Compliant & Halogen-FreeSSOT-23GDescription DAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap2309gn.pdf

AP2309GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75mD Surface Mount Device ID - 3.7ASSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistance andGcost-effect
ap2309gen.pdf

AP2309GENHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 52m Surface Mount Device ID - 4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2309 series are from Advanced Power innovated design and siliconGprocess technology to achieve the
Otros transistores... AOD522 , AP10P10GH , AP2300GN , AP2301N , AP2305GN , AP2306AGN , AP2306N , AP2308GE , RU7088R , AP2310GG , AP4565GM-30V , AP4953M , AP85U03GH , AP9435GG , AP9435GK , AP9435K , AP9563M .
History: AP9997AGH-HF | IRF540ZSPBF | VBE1638 | PSMN5R0-100PS | IRFS621 | AUIRFSL8403 | MMQ60R115PTH
History: AP9997AGH-HF | IRF540ZSPBF | VBE1638 | PSMN5R0-100PS | IRFS621 | AUIRFSL8403 | MMQ60R115PTH



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