AP2309AGN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2309AGN
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de AP2309AGN MOSFET
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AP2309AGN datasheet
ap2309agn.pdf
AP2309AGN www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2
ap2309agn-hf.pdf
AP2309AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75m D Surface Mount Device ID - 3.4A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ap2309gn.pdf
AP2309GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75m D Surface Mount Device ID - 3.7A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and G cost-effect
ap2309gen.pdf
AP2309GEN Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 52m Surface Mount Device ID - 4A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2309 series are from Advanced Power innovated design and silicon G process technology to achieve the
Otros transistores... AOD522 , AP10P10GH , AP2300GN , AP2301N , AP2305GN , AP2306AGN , AP2306N , AP2308GE , IRFZ48N , AP2310GG , AP4565GM-30V , AP4953M , AP85U03GH , AP9435GG , AP9435GK , AP9435K , AP9563M .
History: AOK22N50L | SLD2N65UZ | NTD4909N | AP2310GG
History: AOK22N50L | SLD2N65UZ | NTD4909N | AP2310GG
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