AP2309AGN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP2309AGN
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 5.4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 24 nC
Время нарастания (tr): 4 ns
Выходная емкость (Cd): 150 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm
Тип корпуса: SOT23
AP2309AGN Datasheet (PDF)
ap2309agn.pdf
AP2309AGNwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2
ap2309agn-hf.pdf
AP2309AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75mD Surface Mount Device ID - 3.4A RoHS Compliant & Halogen-FreeSSOT-23GDescription DAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap2309gn.pdf
AP2309GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75mD Surface Mount Device ID - 3.7ASSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistance andGcost-effect
ap2309gen.pdf
AP2309GENHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 52m Surface Mount Device ID - 4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2309 series are from Advanced Power innovated design and siliconGprocess technology to achieve the
ap2309gen-hf.pdf
AP2309GEN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 52m Surface Mount Device ID - 4.2AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2309 series are from Advanced Power innovated design and siliconGprocess technology to achieve
ap2309gn-hf.pdf
AP2309GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75mD Surface Mount Device ID - 3.7A RoHS CompliantSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistanc
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