APM2321AC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APM2321AC
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 4.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 180 pF
Resistencia entre drenaje y fuente RDS(on): 0.035(typ) Ohm
Paquete / Cubierta: SOT23
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APM2321AC Datasheet (PDF)
apm2321ac.pdf
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APM2321ACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIO
apm2321aac.pdf
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APM2321AACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI
apm2324aa.pdf
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APM2324AAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/3A,DRDS(ON)= 50m(Typ.) @ VGS= 4.5VSRDS(ON)= 65m(Typ.) @ VGS= 2.5VGRDS(ON)= 120m(Typ.) @ VGS= 1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and Ba
apm2324a.pdf
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APM2324AN-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature 20V/3A, RDS(ON) = 80m(MAX) @VGS = 4.5V. = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V. = 2.5V. Super High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SC-59 for Surface Mount Package. Applications Power
apm2323aac.pdf
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APM2323AACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
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