All MOSFET. APM2321AC Datasheet

 

APM2321AC MOSFET. Datasheet pdf. Equivalent


   Type Designator: APM2321AC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: SOT23

 APM2321AC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APM2321AC Datasheet (PDF)

 ..1. Size:870K  cn vbsemi
 apm2321ac.pdf

APM2321AC APM2321AC

APM2321ACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIO

 6.1. Size:1477K  cn vbsemi
 apm2321aac.pdf

APM2321AC APM2321AC

APM2321AACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI

 8.1. Size:166K  sino
 apm2324aa.pdf

APM2321AC APM2321AC

APM2324AAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/3A,DRDS(ON)= 50m(Typ.) @ VGS= 4.5VSRDS(ON)= 65m(Typ.) @ VGS= 2.5VGRDS(ON)= 120m(Typ.) @ VGS= 1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and Ba

 8.2. Size:410K  cn shikues
 apm2324a.pdf

APM2321AC APM2321AC

APM2324AN-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature 20V/3A, RDS(ON) = 80m(MAX) @VGS = 4.5V. = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V. = 2.5V. Super High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SC-59 for Surface Mount Package. Applications Power

 8.3. Size:1476K  cn vbsemi
 apm2323aac.pdf

APM2321AC APM2321AC

APM2323AACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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