APM4927KC Todos los transistores

 ..1. Size:1454K  cn vbsemi
 apm4927kc.pdf

APM4927KC www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.021 at VGS = - 10 V - 9.5 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.028 at VGS = - 4.5 V - 8.0 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S1 S2 - Game Stations S1 1 D1 8 G

 6.1. Size:511K  sino
 apm4927k.pdf

APM4927K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 D2 -30V/-9A, D2 RDS(ON)= 15m (typ.) @ VGS=-10V RDS(ON)= 28m (typ.) @ VGS=-4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (1) (3) (RoHS Compliant) S1 S2 Applications (2) (4) G1 G2 Power Management in MB/NB

 8.1. Size:137K  anpec
 apm4925k.pdf

APM4925K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 -30V/-6.1A , D1 D2 RDS(ON)=24m (typ.) @ VGS=-10V D2 RDS(ON)=30m (typ.) @ VGS=-4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP - 8 SOP-8 Package Lead Free Available (RoHS Compliant)

 8.2. Size:148K  anpec
 apm4925.pdf

APM4925 P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-6.1A, RDS(ON) = 24m (typ.) @ VGS = -10V S1 1 8 D1 RDS(ON) = 30m (typ.) @ VGS = -4.5V G1 2 7 D1 Super High Density Cell Design S2 3 6 D2 Reliable and Rugged G2 45 D2 SO-8 Package SO - 8 Applications S1 S2 Power Management i