APM7313KC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APM7313KC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 117 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022(typ) Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET APM7313KC

APM7313KC Datasheet (PDF)

..1. Size:835K cn vbsemi
apm7313kc.pdf

APM7313KCwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

6.1. Size:192K anpec
apm7313k.pdf

APM7313KDual N-Channel Enhancement Mode MOSFETPin DescriptionFeatures 30V/6A,RDS(ON) =21m(typ.) @ VGS = 10VRDS(ON) =27m(typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications Power Management in Notebook Computer,(2) (4)Portable Equipment and Battery P

8.1. Size:216K anpec
apm7318.pdf

APM7318Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/8A , RDS(ON)=15m(typ.) @ VGS=4.5VSO-8RDS(ON)=30m(typ.) @ VGS=2.5VS1 1 8 D1 Super High Dense Cell Design for ExtremelyG1 2 7 D1Low RDS(ON)S2 3 6 D2 Reliable and RuggedG2 45 D2 SO-8 PackageTop ViewD1 D1 D2 D2Applica

8.2. Size:139K anpec
apm7312k.pdf

APM7312KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 20V/6A,D1D2RDS(ON) =35m(typ.) @ VGS = 10VD2 RDS(ON) =45m(typ.) @ VGS = 4.5VS1 G1 RDS(ON) =110m(typ.) @ VGS = 2.5VS2G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant)

8.3. Size:137K anpec
apm7314k.pdf

APM7314KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 30V/8A,D1D2RDS(ON) =18m(typ.) @ VGS = 10VD2 RDS(ON) =23m(typ.) @ VGS = 4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1

8.4. Size:142K anpec
apm7318k.pdf

APM7318KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 20V/8A,D1D2RDS(ON) =15m(typ.) @ VGS =4.5VD2 RDS(ON) =30m(typ.) @ VGS =2.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP - 8 SOP-8 Package Lead Free Available (RoHS Compliant)

8.5. Size:161K anpec
apm7316.pdf

APM7316Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A , RDS(ON)=25m(typ.) @ VGS=4.5VS1 1 8 D1RDS(ON)=40m(typ.) @ VGS=2.5VG1 2 7 D1 Super High Dense Cell Design for ExtremelyS2 3 6 D2G2 4 5 D2Low RDS(ON) Reliable and RuggedSO-8 SO-8 PackageD1 D1 D2 D2ApplicationsG1

8.6. Size:178K anpec
apm7314.pdf

APM7314N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSO-8 30V/6A , RDS(ON)=21m(typ.) @ VGS=10VRDS(ON)=32m(typ.) @ VGS=5VS1 1 8 D1 Super High Dense Cell Design for ExtremelyG1 2 7 D1Low RDS(ON)S2 3 6 D2 Reliable and RuggedG2 45 D2 SO-8 PackageTop ViewApplicationsD1 D1 D2 D2

8.7. Size:146K anpec
apm7312.pdf

APM7312 Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A , RDS(ON)=35m(typ.) @ VGS=10VSO-8RDS(ON)=45m(typ.) @ VGS=4.5VS1 1 8 D1 RDS(ON)=110m(typ.) @ VGS=2.5VG1 2 7 D1 Super High Dense Cell Design for ExtremelyS2 3 6 D2Low RDS(ON) Reliable and Rugged G2 45 D2 SO-8 Package

8.8. Size:1469K cn vbsemi
apm7318kc.pdf

APM7318KCwww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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