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CEM9926 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEM9926
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SO8
 

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CEM9926 Datasheet (PDF)

 ..1. Size:843K  cn vbsemi
 cem9926.pdf pdf_icon

CEM9926

CEM9926www.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D2

 0.1. Size:409K  cet
 cem9926a.pdf pdf_icon

CEM9926

CEM9926ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unl

 9.1. Size:141K  cet
 cem9953a.pdf pdf_icon

CEM9926

CEM9953ADual P-Channel Enhancement Mode Field Effect TransistorFEATURES5-30V, -3.5A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 130m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA =

 9.2. Size:139K  cet
 cem9936a.pdf pdf_icon

CEM9926

CEM9936ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 5.4A, RDS(ON) = 40m @VGS = 10V. RDS(ON) = 55m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C

MOSTRAR MÁS

Otros transistores... BSC019N04NS , BUK9832-55 , C3028LD , CEA3055 , CEA3055L , CEG8205 , CEM4936 , CEM4946 , AO3400 , CEM9956A , CEU20N06 , CEU50N06 , CHMP830JGP , CMD20N06L , CMD20P03 , CMD50N06B , CMD50P03 .

History: AOD4184 | AON6572 | IXTH86N25T | IPD06N03LBG | RZE002P02TL | FIR16N06DG | AON6458

 

 
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