All MOSFET. CEM9926 Datasheet

 

CEM9926 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM9926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 7.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 15 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO8

 CEM9926 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM9926 Datasheet (PDF)

 ..1. Size:843K  cn vbsemi
 cem9926.pdf

CEM9926 CEM9926

CEM9926www.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D2

 0.1. Size:409K  cet
 cem9926a.pdf

CEM9926 CEM9926

CEM9926ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unl

 9.1. Size:141K  cet
 cem9953a.pdf

CEM9926 CEM9926

CEM9953ADual P-Channel Enhancement Mode Field Effect TransistorFEATURES5-30V, -3.5A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 130m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA =

 9.2. Size:139K  cet
 cem9936a.pdf

CEM9926 CEM9926

CEM9936ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 5.4A, RDS(ON) = 40m @VGS = 10V. RDS(ON) = 55m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C

 9.3. Size:141K  cet
 cem9935a.pdf

CEM9926 CEM9926

CEM9935ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES520V, 6.0A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V. RDS(ON) = 75m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D28 7 6 5Lead free product is acquired.Surface mount Package.SO-81 2 3 41S1 G1 S2 G2AB

 9.4. Size:897K  cn vbsemi
 cem9936a.pdf

CEM9926 CEM9926

CEM9936Awww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

 9.5. Size:890K  cn vbsemi
 cem9956a.pdf

CEM9926 CEM9926

CEM9956Awww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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