DMG6602S MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMG6602S datasheet

..1. Size:1546K cn vbsemi
dmg6602s.pdf pdf_icon

DMG6602S www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at V

0.1. Size:511K diodes
dmg6602svtq.pdf pdf_icon

DMG6602SVTQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(on) Low Input Capacitance TA = +25 C Fast Switching Speed 60m @ VGS = 10V 3.4A Low Input/Output Leakage Q1 30V 100m @ VGS = 4.5V 2.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antim

0.2. Size:506K diodes
dmg6602svt.pdf pdf_icon

DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(on) Low Input Capacitance TA = +25 C Fast Switching Speed 60m @ VGS = 10V 3.4A Low Input/Output Leakage Q1 30V 100m @ VGS = 4.5V 2.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti

8.1. Size:382K diodes
dmg6601lvt.pdf pdf_icon

DMG6601LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID max Complementary MOSFET Device V(BR)DSS RDS(ON) max Package TA = +25 C Low On-Resistance Low Input Capacitance 55m @ VGS = 10V TSOT26 3.8A Q1 30V Fast Switching Speed 65m @ VGS = 4.5V TSOT26 3.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS =

Otros transistores... CSD17301Q5 , D10PF06 , D4NK50Z-TO252 , DMC2038LVT-7-F , DMC2700UDM-7 , DMC3018LSD-13 , DMG1013UW-7 , DMG3420U-7 , AO4407 , DMG6968U-7 , DMN4468LSS-13 , DMN6040SK3-13 , DMN6068LK3-13 , DMN6068SE-13 , DMP3025LK3-13 , DMP3056LSD-13 , DTM4926 .