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FDD8444-NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD8444-NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 312 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 85 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 80 nC
   Tiempo de subida (tr): 11 nS
   Conductancia de drenaje-sustrato (Cd): 550 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0064 Ohm
   Paquete / Cubierta: TO252

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FDD8444-NL Datasheet (PDF)

 ..1. Size:835K  cn vbsemi
fdd8444-nl.pdf

FDD8444-NL
FDD8444-NL

FDD8444-NLwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM

 7.1. Size:311K  fairchild semi
fdd8444 f085.pdf

FDD8444-NL
FDD8444-NL

October 2010FDD8444_F085N-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Arch

 7.2. Size:309K  fairchild semi
fdd8444.pdf

FDD8444-NL
FDD8444-NL

June 2007FDD8444tmN-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architec

 7.3. Size:388K  fairchild semi
fdd8444l f085.pdf

FDD8444-NL
FDD8444-NL

January 2009FDD8444L_F085tmN-Channel PowerTrench MOSFET 40V, 50A, 6.0m ApplicationsFeatures Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Po

 7.4. Size:467K  onsemi
fdd8444.pdf

FDD8444-NL
FDD8444-NL

March 2015FDD8444N-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architectur

 7.5. Size:816K  onsemi
fdd8444l-f085.pdf

FDD8444-NL
FDD8444-NL

FDD8444L-F085N-Channel PowerTrench MOSFET40V, 50A, 6.0m ApplicationsFeatures Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architecture an

 7.6. Size:287K  inchange semiconductor
fdd8444.pdf

FDD8444-NL
FDD8444-NL

isc N-Channel MOSFET Transistor FDD8444FEATURESDrain Current : I =155A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =5.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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