FDD8444-NLwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM

October 2010FDD8444_F085N-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Arch

June 2007FDD8444tmN-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architec

January 2009FDD8444L_F085tmN-Channel PowerTrench MOSFET 40V, 50A, 6.0m ApplicationsFeatures Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Po

March 2015FDD8444N-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architectur

FDD8444L-F085N-Channel PowerTrench MOSFET40V, 50A, 6.0m ApplicationsFeatures Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architecture an

isc N-Channel MOSFET Transistor FDD8444FEATURESDrain Current : I =155A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =5.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid