FDN304P-NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDN304P-NL
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SOT23

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FDN304P-NL Datasheet (PDF)

..1. Size:869K cn vbsemi
fdn304p-nl.pdf

FDN304P-NLwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-

6.1. Size:1458K kexin
fdn304p-3.pdf

SMD Type MOSFETP-Channel MOSFETFDN304P (KDN304P)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.4A (VGS =-4.5V)1 2 RDS(ON) 52m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 70m (VGS =-2.5V) 1.9-0.2 RDS(ON) 100m (VGS =-1.8V)1.Gate2.SourceD 3.DrainG S Absolute Maximum Rati

7.1. Size:113K fairchild semi
fdn304p.pdf

January 2001FDN304PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET uses 2.4 A, 20 V. RDS(ON) = 52 m @ VGS = 4.5 VFairchilds advanced low voltage PowerTrench process.RDS(ON) = 70 m @ VGS = 2.5 VIt has been optimized for battery power managementRDS(ON) = 100 m @ VGS = 1.8

7.2. Size:123K fairchild semi
fdn304pz.pdf

March 2003 FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2.4 A, 20 V. RDS(ON) = 52 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 70 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 100 m @ VGS = 1.8 V app

7.3. Size:220K onsemi
fdn304p.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.4. Size:239K onsemi
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7.5. Size:1261K kexin
fdn304p.pdf

SMD Type MOSFETP-Channel MOSFETFDN304P (KDN304P)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 VDS (V) =-20V 3 ID =-2.4A (VGS =-4.5V) RDS(ON) 52m (VGS =-4.5V) RDS(ON) 70m (VGS =-2.5V)1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V)+0.11.9-0.11.GateD2.Source3.DrainG S Absolute Maximum Ratings

7.6. Size:819K umw-ic
fdn304p.pdf

RUMW UMW FDN304P SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFETFDN304P V(BR)DSS RDS(on)MAX ID52m@ -4.5V-20 V -2.4A70m@ -2.5V100m@ -1.8VFEATUREAPPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management MARKING Equivalent CircuitSOT23 1. GATE 2. SOURCE 3. DR

7.7. Size:531K cn shikues
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