FDN304P-NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDN304P-NL
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 5.4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 24 nC
Время нарастания (tr): 4 ns
Выходная емкость (Cd): 150 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm
Тип корпуса: SOT23
Аналог (замена) для FDN304P-NL
FDN304P-NL Datasheet (PDF)
fdn304p-nl.pdf
FDN304P-NLwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-
fdn304p-3.pdf
SMD Type MOSFETP-Channel MOSFETFDN304P (KDN304P)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.4A (VGS =-4.5V)1 2 RDS(ON) 52m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 70m (VGS =-2.5V) 1.9-0.2 RDS(ON) 100m (VGS =-1.8V)1.Gate2.SourceD 3.DrainG S Absolute Maximum Rati
fdn304p.pdf
January 2001FDN304PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET uses 2.4 A, 20 V. RDS(ON) = 52 m @ VGS = 4.5 VFairchilds advanced low voltage PowerTrench process.RDS(ON) = 70 m @ VGS = 2.5 VIt has been optimized for battery power managementRDS(ON) = 100 m @ VGS = 1.8
fdn304pz.pdf
March 2003 FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2.4 A, 20 V. RDS(ON) = 52 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 70 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 100 m @ VGS = 1.8 V app
fdn304p.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdn304p2.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdn304p.pdf
SMD Type MOSFETP-Channel MOSFETFDN304P (KDN304P)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 VDS (V) =-20V 3 ID =-2.4A (VGS =-4.5V) RDS(ON) 52m (VGS =-4.5V) RDS(ON) 70m (VGS =-2.5V)1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V)+0.11.9-0.11.GateD2.Source3.DrainG S Absolute Maximum Ratings
fdn304p.pdf
RUMW UMW FDN304P SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFETFDN304P V(BR)DSS RDS(on)MAX ID52m@ -4.5V-20 V -2.4A70m@ -2.5V100m@ -1.8VFEATUREAPPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management MARKING Equivalent CircuitSOT23 1. GATE 2. SOURCE 3. DR
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: AP2305CGN-HF
