FDN337N-NL Todos los transistores

 ..1. Size:1722K  cn vbsemi
 fdn337n-nl.pdf

FDN337N-NL www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

 7.1. Size:276K  fairchild semi
 fdn337n.pdf

March 1998 FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement mode 2.2 A, 30 V, RDS(ON) = 0.065 @ VGS = 4.5 V power field effect transistors are produced using Fairchild's RDS(ON) = 0.082 @ VGS = 2.5 V. proprietary, high cell density, DMOS technology. This very Industry standard

 7.2. Size:391K  onsemi
 fdn337n.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.3. Size:399K  cn shikues
 fdn337n.pdf

FDN337N N-Channel Enhancement Mode MOSFET Feature 20V/3.0A, RDS(ON) = 80m (MAX) @VGS = 4.5V. RDS(ON) = 90m (MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . SOT-23 Reliable and Rugged. SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=25 Unl