FDN337N-NLwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

March 1998 FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesSuperSOTTM-3 N-Channel logic level enhancement mode 2.2 A, 30 V, RDS(ON) = 0.065 @ VGS = 4.5 Vpower field effect transistors are produced using Fairchild'sRDS(ON) = 0.082 @ VGS = 2.5 V. proprietary, high cell density, DMOS technology. This veryIndustry standard

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDN337NN-Channel Enhancement Mode MOSFETFeature 20V/3.0A, RDS(ON) = 80m(MAX) @VGS = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . SOT-23 Reliable and Rugged. SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=25 Unl