FDS4685-NL Todos los transistores

 

FDS4685-NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS4685-NL

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 335 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 typ Ohm

Encapsulados: SO8

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FDS4685-NL datasheet

 ..1. Size:840K  cn vbsemi
fds4685-nl.pdf pdf_icon

FDS4685-NL

FDS4685-NL www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD

 7.1. Size:506K  fairchild semi
fds4685.pdf pdf_icon

FDS4685-NL

June 2005 FDS4685 40V P-Channel PowerTrench MOSFET Features Applications 8.2 A, 40 V RDS(ON) = 0.027 @ VGS = 10 V Power management RDS(ON) = 0.035 @ VGS = 4.5 V Load switch Fast switching speed Battery protection High performance trench technology for extremely low RDS(ON) General Description High power and current handling capabi

 7.2. Size:594K  onsemi
fds4685.pdf pdf_icon

FDS4685-NL

FDS4685 40V P-Channel PowerTrench MOSFET Applications Features Power management 8.2 A, 40 V RDS(ON) = 0.027 @ VGS = 10 V Load switch RDS(ON) = 0.035 @ VGS = 4.5 V Battery protection Fast switching speed High performance trench technology for extremely low General Description RDS(ON) High power and current handling capability This P-

 9.1. Size:73K  fairchild semi
fds4675.pdf pdf_icon

FDS4685-NL

February 2001 FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 11 A, 40 V R = 0.013 @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 0.017 @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of g

Otros transistores... FDD8580-6 , FDN304P-NL , FDN335N-NL , FDN337N-NL , FDN338P-NL , FDS4435-NL , FDS4450 , FDS4465-NL-9 , IRFZ48N , FDS4897A , FDS4935BZ-NL-38 , FDS4936 , FDS6675B , FDS8333C , FDS8435A , FDS8984-NL , FDS9435 .

History: BSC098N10NS5 | IRFU3704 | SSS45N20B | FDS6675B | FQB34N20 | RU6035M3 | SUN0550D

 

 

 

 

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