FQU13N06 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQU13N06 datasheet

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January 2009 QFET FQD13N06 / FQU13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 60V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been especially

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FQU13N06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secondar

0.1. Size:733K fairchild semi
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January 2009 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11A, 60V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been e

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FQD13N06L / FQU13N06L N-Channel QFET MOSFET 60 V, 11 A, 115 m Features 11 A, 60 V, RDS(on) = 115 m (Max) @ VGS = 10 V, Description ID = 5.5 A This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 4.8 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 17 pF) planar stripe and DMOS technology. This advanced MOSFET technology has b