All MOSFET. FQU13N06 Datasheet

 

FQU13N06 Datasheet and Replacement


   Type Designator: FQU13N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 46 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 281 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032(typ) Ohm
   Package: TO251
 

 FQU13N06 substitution

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FQU13N06 Datasheet (PDF)

 ..1. Size:731K  fairchild semi
 fqd13n06tf fqd13n06tm fqd13n06 fqu13n06 fqu13n06tu.pdf pdf_icon

FQU13N06

January 2009QFETFQD13N06 / FQU13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 60V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially

 ..2. Size:1671K  cn vbsemi
 fqu13n06.pdf pdf_icon

FQU13N06

FQU13N06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secondar

 0.1. Size:733K  fairchild semi
 fqd13n06ltf fqd13n06ltm fqd13n06l fqu13n06l fqu13n06ltu.pdf pdf_icon

FQU13N06

January 2009QFETFQD13N06L / FQU13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 60V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been e

 0.2. Size:1008K  onsemi
 fqd13n06l fqu13n06l.pdf pdf_icon

FQU13N06

FQD13N06L / FQU13N06LN-Channel QFET MOSFET60 V, 11 A, 115 m Features 11 A, 60 V, RDS(on) = 115 m (Max) @ VGS = 10 V,Description ID = 5.5 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 4.8 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 17 pF)planar stripe and DMOS technology. This advanced MOSFET technology has b

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Datasheet: FDS9435A-NL , FDS9945-NL , FDT1600N10A , FDW2601NZ , FL014N , FNK10N25B , FQD13N10LTF , FQD20N06LE , IRFZ44N , FQU13N10 , FR120N , FR2307Z , FR5305 , FR5505 , FR9N20D , FSS210 , FTD2017 .

Keywords - FQU13N06 MOSFET datasheet

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