FQU13N10 Todos los transistores

 ..1. Size:714K  fairchild semi
 fqd13n10tf fqd13n10tm fqd13n10 fqu13n10 fqu13n10tu.pdf

January 2009 QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 100V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especiall

 ..2. Size:1342K  cn vbsemi
 fqu13n10.pdf

FQU13N10 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

 0.1. Size:630K  fairchild semi
 fqd13n10l fqu13n10l.pdf

January 2009 QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 100V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.7 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology is especi

 0.2. Size:1231K  onsemi
 fqd13n10l fqu13n10l.pdf

January 2014 FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 m Description Features This N-Channel enhancement mode power MOSFET 10 A, 100 V, RDS(on) = 180 m (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor s proprietary ID = 5.0 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 8.7 nC) MOSFET technology has been

 8.1. Size:733K  fairchild semi
 fqd13n06ltf fqd13n06ltm fqd13n06l fqu13n06l fqu13n06ltu.pdf

January 2009 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11A, 60V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been e

 8.2. Size:731K  fairchild semi
 fqd13n06tf fqd13n06tm fqd13n06 fqu13n06 fqu13n06tu.pdf

January 2009 QFET FQD13N06 / FQU13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 60V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been especially

 8.3. Size:1008K  onsemi
 fqd13n06l fqu13n06l.pdf

FQD13N06L / FQU13N06L N-Channel QFET MOSFET 60 V, 11 A, 115 m Features 11 A, 60 V, RDS(on) = 115 m (Max) @ VGS = 10 V, Description ID = 5.5 A This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 4.8 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 17 pF) planar stripe and DMOS technology. This advanced MOSFET technology has b

 8.4. Size:1671K  cn vbsemi
 fqu13n06.pdf

FQU13N06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secondar

 8.5. Size:745K  cn vbsemi
 fqu13n06l.pdf

FQU13N06L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Seconda