FQU13N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQU13N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 61 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11(typ) Ohm
Package: TO251
FQU13N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQU13N10 Datasheet (PDF)
fqd13n10tf fqd13n10tm fqd13n10 fqu13n10 fqu13n10tu.pdf
January 2009QFETFQD13N10 / FQU13N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especiall
fqu13n10.pdf
FQU13N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V 15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise
fqd13n10l fqu13n10l.pdf
January 2009QFETFQD13N10L / FQU13N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology is especi
fqd13n10l fqu13n10l.pdf
January 2014FQD13N10L / FQU13N10LN-Channel QFET MOSFET100 V, 10 A, 180 mDescription FeaturesThis N-Channel enhancement mode power MOSFET 10 A, 100 V, RDS(on) = 180 m (Max.) @ VGS = 10 V,is produced using Fairchild Semiconductors proprietary ID = 5.0 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 8.7 nC)MOSFET technology has been
fqd13n06ltf fqd13n06ltm fqd13n06l fqu13n06l fqu13n06ltu.pdf
January 2009QFETFQD13N06L / FQU13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 60V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been e
fqd13n06tf fqd13n06tm fqd13n06 fqu13n06 fqu13n06tu.pdf
January 2009QFETFQD13N06 / FQU13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 60V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially
fqd13n06l fqu13n06l.pdf
FQD13N06L / FQU13N06LN-Channel QFET MOSFET60 V, 11 A, 115 m Features 11 A, 60 V, RDS(on) = 115 m (Max) @ VGS = 10 V,Description ID = 5.5 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 4.8 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 17 pF)planar stripe and DMOS technology. This advanced MOSFET technology has b
fqu13n06.pdf
FQU13N06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secondar
fqu13n06l.pdf
FQU13N06Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Seconda
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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