FR120N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FR120N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 96 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 24 nC
Tiempo de subida (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 120 pF
Resistencia entre drenaje y fuente RDS(on): 0.114(typ) Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET FR120N
FR120N Datasheet (PDF)
fr120n.pdf
FR120Nwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (T
irfr120npbf irfu120npbf.pdf
PD - 95067AIRFR/U120NPbF Lead-Freewww.irf.com 112/9/04IRFR/U120NPbF2 www.irf.comIRFR/U120NPbFwww.irf.com 3IRFR/U120NPbF4 www.irf.comIRFR/U120NPbFwww.irf.com 5IRFR/U120NPbF6 www.irf.comIRFR/U120NPbFwww.irf.com 7IRFR/U120NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationEXAMP
irfr120n.pdf
PD - 91365BIRFR/U120NHEXFET Power MOSFET Surface Mount (IRFR120N)D Straight Lead (IRFU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.21 Fully Avalanche RatedGDescriptionID = 9.4ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. T
irfr120npbf irfu120npbf.pdf
PD - 95067AIRFR/U120NPbF Lead-Freewww.irf.com 112/9/04IRFR/U120NPbF2 www.irf.comIRFR/U120NPbFwww.irf.com 3IRFR/U120NPbF4 www.irf.comIRFR/U120NPbFwww.irf.com 5IRFR/U120NPbF6 www.irf.comIRFR/U120NPbFwww.irf.com 7IRFR/U120NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationEXAMP
ixfr120n20.pdf
IXFR 120N20 VDSS = 200 VHiPerFETTM Power MOSFETsID25 = 105 AISOPLUS247TMRDS(on) = 17 m(Electrically Isolated Back Surface) trr 250 ns Single MOSFET DiePreliminary Data SheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VGVGS Continuo
irfr120ntrpbf.pdf
IRFR120NTRPBFwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RAT
irfr120n.pdf
isc N-Channel MOSFET Transistor IRFR120N, IIRFR120NFEATURESStatic drain-source on-resistance:RDS(on)210mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
