FR120N Todos los transistores

 ..1. Size:2741K  cn vbsemi
 fr120n.pdf

FR120N www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T

 0.1. Size:390K  international rectifier
 irfr120npbf irfu120npbf.pdf

PD - 95067A IRFR/U120NPbF Lead-Free www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.irf.com IRFR/U120NPbF www.irf.com 5 IRFR/U120NPbF 6 www.irf.com IRFR/U120NPbF www.irf.com 7 IRFR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMP

 0.2. Size:142K  international rectifier
 irfr120n.pdf

PD - 91365B IRFR/U120N HEXFET Power MOSFET Surface Mount (IRFR120N) D Straight Lead (IRFU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.21 Fully Avalanche Rated G Description ID = 9.4A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. T

 0.3. Size:74K  ixys
 ixfr120n20.pdf

IXFR 120N20 VDSS = 200 V HiPerFETTM Power MOSFETs ID25 = 105 A ISOPLUS247TM RDS(on) = 17 m (Electrically Isolated Back Surface) trr 250 ns Single MOSFET Die Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V G VGS Continuo

 0.4. Size:764K  cn vbsemi
 irfr120ntrpbf.pdf

IRFR120NTRPBF www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RAT

 0.5. Size:241K  inchange semiconductor
 irfr120n.pdf

isc N-Channel MOSFET Transistor IRFR120N, IIRFR120N FEATURES Static drain-source on-resistance RDS(on) 210m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat