All MOSFET. FR120N Datasheet

 

FR120N Datasheet and Replacement


   Type Designator: FR120N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 24 nC
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.114(typ) Ohm
   Package: TO252
 
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FR120N Datasheet (PDF)

 ..1. Size:2741K  cn vbsemi
 fr120n.pdf pdf_icon

FR120N

FR120Nwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (T

 0.1. Size:390K  international rectifier
 irfr120npbf irfu120npbf.pdf pdf_icon

FR120N

PD - 95067AIRFR/U120NPbF Lead-Freewww.irf.com 112/9/04IRFR/U120NPbF2 www.irf.comIRFR/U120NPbFwww.irf.com 3IRFR/U120NPbF4 www.irf.comIRFR/U120NPbFwww.irf.com 5IRFR/U120NPbF6 www.irf.comIRFR/U120NPbFwww.irf.com 7IRFR/U120NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationEXAMP

 0.2. Size:142K  international rectifier
 irfr120n.pdf pdf_icon

FR120N

PD - 91365BIRFR/U120NHEXFET Power MOSFET Surface Mount (IRFR120N)D Straight Lead (IRFU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.21 Fully Avalanche RatedGDescriptionID = 9.4ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. T

 0.3. Size:74K  ixys
 ixfr120n20.pdf pdf_icon

FR120N

IXFR 120N20 VDSS = 200 VHiPerFETTM Power MOSFETsID25 = 105 AISOPLUS247TMRDS(on) = 17 m(Electrically Isolated Back Surface) trr 250 ns Single MOSFET DiePreliminary Data SheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VGVGS Continuo

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Datasheet: FDT1600N10A , FDW2601NZ , FL014N , FNK10N25B , FQD13N10LTF , FQD20N06LE , FQU13N06 , FQU13N10 , IRF740 , FR2307Z , FR5305 , FR5505 , FR9N20D , FSS210 , FTD2017 , FTD2017A , FTU36N06N .

History: CTLDM7590 | 2SK3285

Keywords - FR120N MOSFET datasheet

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