HAT2064RJ
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HAT2064RJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 15
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12
nS
Cossⓘ - Capacitancia
de salida: 195
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004(typ)
Ohm
Paquete / Cubierta:
SO8
- Selección de transistores por parámetros
HAT2064RJ
Datasheet (PDF)
..1. Size:1832K cn vbsemi
hat2064rj.pdf 
HAT2064RJwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
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9.35. Size:65K hitachi
hat2019r.pdf 
HAT2019R N MOS FETADJ-208-474 (Z)96.06 2.5V SOP856784325 6 7 8 1D D D D4G1, 2, 3 Source4 Gate5, 6, 7, 8 DrainS S
9.36. Size:23K hitachi
hat2054m.pdf 
HAT2054MSilicon N Channel Power MOS FETPower SwitchingADE-208-756B (Z)Preliminary 3rd. EditionDec. 1998Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V sourceOutlineTSOP645631 2 5 62D D D D13G4 Source3 Gate1, 2, 5, 6 DrainS4HAT2054MAbsolute Maximum Ratings (Ta
9.37. Size:27K hitachi
hat2045t.pdf 
HAT2045TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-773D (Z)Target Specification5th. EditionMar. 2001Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP85687412381DD4 5GG1, 8 DS SS S2, 3, 6, 7 Sou2 3 674, 5 GMOS2MOS1HAT2045TAbsolute
9.38. Size:50K hitachi
hat2052t.pdf 
HAT2052TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-724C (Z)4th. EditionFeb. 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP85687412381DD4 5GG1, 8 DrainS SS S2, 3, 6, 7 Source2 3 674, 5 GateMOS2MOS1HAT2052TAbsolute Maximum Rati
9.39. Size:50K hitachi
hat2042t.pdf 
HAT2042TSilicon N Channel Power MOS FETHigh Speed Power Switching ADE-208-669F (Z)7th. EditionFeb. 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP85687412381DD4 5GG1, 8 DrainS SS S2, 3, 6, 7 Source2 3 674, 5 GateMOS2MOS1HAT2042TAbsolute Maximum Rat
9.40. Size:51K hitachi
hat2039r.pdf 
HAT2039RSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-667C (Z)4th. EditionMar. 2001Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineSOP8567843217 85 6D DD D42GG1, 3 S2, 4 G5, 6, 7, 8 DraS 3S 1MOS2MOS1HAT2039RAbsolute Maximum Ratings (Ta
9.41. Size:56K hitachi
hat2043r.pdf 
HAT2043RSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-668D (Z)5th. EditionFebruary 1999Features Low on-resistance Capable of 4 V gate drive Low drive current High density mountingOutlineSOP8567843217 85 6D DD D42GG1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS 3S1MOS2MOS1HAT2043RAbsolute Maximum
9.42. Size:52K hitachi
hat2049t.pdf 
HAT2049TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-723 (Z)1st. EditionFebruary 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP8568741231 5 8D D D4G1, 5, 8 Drain2, 3, 6, 7 Source4 GateS S S S2 3 76HAT2049TAbsolute Maximum Ratings (Ta = 25
9.43. Size:1639K cn vbsemi
hat2016r.pdf 
HAT2016Rwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
9.44. Size:1056K cn vbsemi
hat2016rj.pdf 
HAT2016RJwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
9.45. Size:752K cn vbsemi
hat2029rj.pdf 
HAT2029RJwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
9.46. Size:754K cn vbsemi
hat2029r.pdf 
HAT2029Rwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
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History: IXTP50N28T
| 3SK249