HAT2064RJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HAT2064RJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 195 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 typ Ohm
Encapsulados: SO8
Búsqueda de reemplazo de HAT2064RJ MOSFET
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HAT2064RJ datasheet
..1. Size:1832K cn vbsemi
hat2064rj.pdf 
HAT2064RJ www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch
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9.35. Size:65K hitachi
hat2019r.pdf
HAT2019R N MOS FET ADJ-208-474 (Z) 96.06 2.5V SOP 8 5 6 7 8 4 3 2 5 6 7 8 1 D D D D 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S
9.36. Size:23K hitachi
hat2054m.pdf
HAT2054M Silicon N Channel Power MOS FET Power Switching ADE-208-756B (Z) Preliminary 3rd. Edition Dec. 1998 Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP 6 4 5 6 3 1 2 5 6 2 D D D D 1 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT2054M Absolute Maximum Ratings (Ta
9.37. Size:27K hitachi
hat2045t.pdf
HAT2045T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-773D (Z) Target Specification 5th. Edition Mar. 2001 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP 8 5 6 87 4 123 8 1 D D 4 5 G G 1, 8 D S S S S 2, 3, 6, 7 Sou 2 3 6 7 4, 5 G MOS2 MOS1 HAT2045T Absolute
9.38. Size:50K hitachi
hat2052t.pdf
HAT2052T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-724C (Z) 4th. Edition Feb. 1999 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP 8 5 6 87 4 123 8 1 D D 4 5 G G 1, 8 Drain S S S S 2, 3, 6, 7 Source 2 3 6 7 4, 5 Gate MOS2 MOS1 HAT2052T Absolute Maximum Rati
9.39. Size:50K hitachi
hat2042t.pdf
HAT2042T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-669F (Z) 7th. Edition Feb. 1999 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP 8 5 6 87 4 123 8 1 D D 4 5 G G 1, 8 Drain S S S S 2, 3, 6, 7 Source 2 3 6 7 4, 5 Gate MOS2 MOS1 HAT2042T Absolute Maximum Rat
9.40. Size:51K hitachi
hat2039r.pdf
HAT2039R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-667C (Z) 4th. Edition Mar. 2001 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP 8 5 6 7 8 4 3 2 1 7 8 5 6 D D D D 4 2 G G 1, 3 S 2, 4 G 5, 6, 7, 8 Dra S 3 S 1 MOS2 MOS1 HAT2039R Absolute Maximum Ratings (Ta
9.41. Size:56K hitachi
hat2043r.pdf
HAT2043R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-668D (Z) 5th. Edition February 1999 Features Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP 8 5 6 7 8 4 3 2 1 7 8 5 6 D D D D 4 2 G G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S 3 S1 MOS2 MOS1 HAT2043R Absolute Maximum
9.43. Size:1639K cn vbsemi
hat2016r.pdf
HAT2016R www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box
9.46. Size:754K cn vbsemi
hat2029r.pdf
HAT2029R www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box
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