HAT2064RJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HAT2064RJ
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 15 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 195 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.004(typ) Ohm
Тип корпуса: SO8
HAT2064RJ Datasheet (PDF)
hat2064rj.pdf
HAT2064RJwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
rej03g1175 hat2064rds.pdf
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hat2019r.pdf
HAT2019R N MOS FETADJ-208-474 (Z)96.06 2.5V SOP856784325 6 7 8 1D D D D4G1, 2, 3 Source4 Gate5, 6, 7, 8 DrainS S
hat2054m.pdf
HAT2054MSilicon N Channel Power MOS FETPower SwitchingADE-208-756B (Z)Preliminary 3rd. EditionDec. 1998Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V sourceOutlineTSOP645631 2 5 62D D D D13G4 Source3 Gate1, 2, 5, 6 DrainS4HAT2054MAbsolute Maximum Ratings (Ta
hat2045t.pdf
HAT2045TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-773D (Z)Target Specification5th. EditionMar. 2001Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP85687412381DD4 5GG1, 8 DS SS S2, 3, 6, 7 Sou2 3 674, 5 GMOS2MOS1HAT2045TAbsolute
hat2052t.pdf
HAT2052TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-724C (Z)4th. EditionFeb. 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP85687412381DD4 5GG1, 8 DrainS SS S2, 3, 6, 7 Source2 3 674, 5 GateMOS2MOS1HAT2052TAbsolute Maximum Rati
hat2042t.pdf
HAT2042TSilicon N Channel Power MOS FETHigh Speed Power Switching ADE-208-669F (Z)7th. EditionFeb. 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP85687412381DD4 5GG1, 8 DrainS SS S2, 3, 6, 7 Source2 3 674, 5 GateMOS2MOS1HAT2042TAbsolute Maximum Rat
hat2039r.pdf
HAT2039RSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-667C (Z)4th. EditionMar. 2001Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineSOP8567843217 85 6D DD D42GG1, 3 S2, 4 G5, 6, 7, 8 DraS 3S 1MOS2MOS1HAT2039RAbsolute Maximum Ratings (Ta
hat2043r.pdf
HAT2043RSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-668D (Z)5th. EditionFebruary 1999Features Low on-resistance Capable of 4 V gate drive Low drive current High density mountingOutlineSOP8567843217 85 6D DD D42GG1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS 3S1MOS2MOS1HAT2043RAbsolute Maximum
hat2049t.pdf
HAT2049TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-723 (Z)1st. EditionFebruary 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP8568741231 5 8D D D4G1, 5, 8 Drain2, 3, 6, 7 Source4 GateS S S S2 3 76HAT2049TAbsolute Maximum Ratings (Ta = 25
hat2016r.pdf
HAT2016Rwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
hat2016rj.pdf
HAT2016RJwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
hat2029rj.pdf
HAT2029RJwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
hat2029r.pdf
HAT2029Rwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
