HM8810E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM8810E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 1 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 5.2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 330 nS
   Resistencia entre drenaje y fuente RDS(on): 0.024(typ) Ohm
   Paquete / Cubierta: TSOP6

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HM8810E Datasheet (PDF)

..1. Size:1022K cn vbsemi
hm8810e.pdf

HM8810Ewww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G23 4

..2. Size:673K cn hmsemi
hm8810e.pdf

HM8810EDual N-Channel Enhancement Mode Power MOSFET Description The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = 20V,ID =7A RDS(ON)

8.1. Size:869K cn hmsemi
hm8810s.pdf

HM8810SDual N-Channel Trench Power MOSFETGeneral DescriptionThe HM8810S uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching applications.Schematic DiagramFeatures VDS = 20V,ID =5A HM8810SR

8.2. Size:881K cn hmsemi
hm8810a.pdf

HM Dual N-Channel Trench Power MOSFETGeneral DescriptionThe HM uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching applications.Schematic DiagramFeatures VDS = 20V,ID =7A HM R

9.1. Size:64K chenmko
chm8811jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM8811JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High powe

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