HM8810E MOSFET. Datasheet pdf. Equivalent
Type Designator: HM8810E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 5.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 330 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024(typ) Ohm
Package: TSOP6
HM8810E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM8810E Datasheet (PDF)
hm8810e.pdf
HM8810Ewww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G23 4
hm8810e.pdf
HM8810EDual N-Channel Enhancement Mode Power MOSFET Description The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = 20V,ID =7A RDS(ON)
hm8810s.pdf
HM8810SDual N-Channel Trench Power MOSFETGeneral DescriptionThe HM8810S uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching applications.Schematic DiagramFeatures VDS = 20V,ID =5A HM8810SR
hm8810a.pdf
HM Dual N-Channel Trench Power MOSFETGeneral DescriptionThe HM uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching applications.Schematic DiagramFeatures VDS = 20V,ID =7A HM R
chm8811jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM8811JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High powe
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