IRF7306QTR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7306QTR

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 215 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 typ Ohm

Encapsulados: SO8

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IRF7306QTR datasheet

 ..1. Size:1689K  cn vbsemi
 irf7306qtr.pdf pdf_icon

IRF7306QTR

IRF7306QTR www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top V

 6.1. Size:249K  international rectifier
 irf7306qpbf.pdf pdf_icon

IRF7306QTR

PD - 96105 IRF7306QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = -30V l Dual P Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 l 150 C Operating Temperature 5 G2 D2 RDS(on) = 0.10 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applic

 7.1. Size:231K  international rectifier
 irf7306pbf.pdf pdf_icon

IRF7306QTR

PD - 95178 IRF7306PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet 1 8 S1 D1 VDSS = -30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 l Fast Switching G2 D2 RDS(on) = 0.10 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advance

 7.2. Size:113K  international rectifier
 irf7306.pdf pdf_icon

IRF7306QTR

PD - 9.1241C IRF7306 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = -30V Dual P-Channel Mosfet 2 7 G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 RDS(on) = 0.10 G2 D2 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

MOSTRAR MÁS

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