IRF7314TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7314TRPBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 215 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035(typ) Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de IRF7314TRPBF MOSFET
IRF7314TRPBF Datasheet (PDF)
irf7314trpbf.pdf

IRF7314TRPBFwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top
irf7314q.pdf

PD -93945AIRF7314QHEXFET Power MOSFETTypical ApplicationsVDSS RDS(on) max ID Anti-lock Braking Systems (ABS) -20V 0.058@VGS = -4.5V -5.2A Electronic Fuel Injection0.098@VGS = -2.7V -4.42A Air bagBenefits Advanced Process Technology Dual P-Channel MOSFET1 8S1 D1 Ultra Low On-Resistance2 7G1 D1 175C Operating Temperature3 6S2 D2
irf7314.pdf

PD - 9.1436BIRF7314PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -20V2 7 Dual P-Channel MOSFETG1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2RDS(on) = 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l
irf7314pbf.pdf

PD - 95181IRF7314PbFHEXFET Power MOSFETl Generation V Technology1 8S1 D1l Ultra Low On-ResistanceVDSS = -20V2 7l Dual P-Channel MOSFETG1 D1l Surface Mount3 6S2 D2l Fully Avalanche Rated4 5G2 D2l Lead-Free RDS(on) = 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme
Otros transistores... IRF7303TR , IRF7304QTR , IRF7306QTR , IRF7306TR , IRF7309TRPBF , IRF7311TR , IRF7313QTR , IRF7313TR , AO3401 , IRF7317TR , IRF7319TR , IRF7321D2TRPBF , IRF7324TR , IRF7341TRPBF , IRF7342QTR , IRF7342TR , IRF7343QTR .
History: BUK7J1R0-40H | IPL65R165CFD | OSG60R200JSZF | OSG60R1K8AF | IRFH7440TRPBF | SIHFPC50A
History: BUK7J1R0-40H | IPL65R165CFD | OSG60R200JSZF | OSG60R1K8AF | IRFH7440TRPBF | SIHFPC50A



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
irfp260n datasheet | irfp250m | 2sk1058 | ss8550 | mje15033 | 2sc945 datasheet | a92 transistor | rfp50n06