IRF7314TRPBF Todos los transistores

 

IRF7314TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7314TRPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035(typ) Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

IRF7314TRPBF Datasheet (PDF)

 ..1. Size:909K  cn vbsemi
 irf7314trpbf.pdf pdf_icon

IRF7314TRPBF

IRF7314TRPBFwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top

 7.1. Size:148K  international rectifier
 irf7314q.pdf pdf_icon

IRF7314TRPBF

PD -93945AIRF7314QHEXFET Power MOSFETTypical ApplicationsVDSS RDS(on) max ID Anti-lock Braking Systems (ABS) -20V 0.058@VGS = -4.5V -5.2A Electronic Fuel Injection0.098@VGS = -2.7V -4.42A Air bagBenefits Advanced Process Technology Dual P-Channel MOSFET1 8S1 D1 Ultra Low On-Resistance2 7G1 D1 175C Operating Temperature3 6S2 D2

 7.2. Size:147K  international rectifier
 irf7314.pdf pdf_icon

IRF7314TRPBF

PD - 9.1436BIRF7314PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -20V2 7 Dual P-Channel MOSFETG1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2RDS(on) = 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

 7.3. Size:195K  international rectifier
 irf7314pbf.pdf pdf_icon

IRF7314TRPBF

PD - 95181IRF7314PbFHEXFET Power MOSFETl Generation V Technology1 8S1 D1l Ultra Low On-ResistanceVDSS = -20V2 7l Dual P-Channel MOSFETG1 D1l Surface Mount3 6S2 D2l Fully Avalanche Rated4 5G2 D2l Lead-Free RDS(on) = 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

MOSTRAR MÁS

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IXTP50N28T | 3SK249

 

 
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