IRF7321D2TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF7321D2TRPBFwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25T

PD- 91667CIRF7321D2TMFETKY MOSFET & Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -30V2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET3 6RDS(on) = 0.062S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky Vf = 0.52V SO-8 FootprintTop ViewDescriptionThe FETKYTM family of Co-package

PD - 95297IRF7321D2PbFTMFETKY MOSFET & Schottky Diodel Co-packaged HEXFET PowerMOSFET and Schottky Diode 1 8A KVDSS = -30Vl Ideal For Buck Regulator Applications2 7A Kl P-Channel HEXFET3 6RDS(on) = 0.062l Low VF Schottky Rectifier S Dl Generation 5 Technology45G Dl SO-8 FootprintSchottky Vf = 0.52Vl Lead-FreeTop ViewDescriptionThe FETKYTM f

PD - 95298IRF7322D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power MOSFET1 8and Schottky Diode K VDSS = -20VAl Ideal For Buck Regulator Applications 2 7A Kl P-Channel HEXFETRDS(on) = 0.0583 6S Dl Low VF Schottky Rectifier45G Dl Generation 5 TechnologySchottky Vf = 0.39Vl SO-8 FootprintTop Viewl Lead-FreeDescriptionThe FETKY family

PD- 94094IRF7325HEXFET Power MOSFET Trench Technology)VDSS RDS(on) max (m) ID))) Ultra Low On-Resistance -12V 24@VGS = -4.5V 7.8A Dual P-Channel MOSFET33@VGS = -2.5V 6.2A Low Profile (

PD - 95311IRF7326D2PbF Lead-Freewww.irf.com 110/13/04IRF7326D2PbF2 www.irf.comIRF7326D2PbFwww.irf.com 3IRF7326D2PbF4 www.irf.comIRF7326D2PbFwww.irf.com 5IRF7326D2PbF6 www.irf.comIRF7326D2PbFSO-8 (Fetky) Package OutlineINCHES MILLIMETERSDIMD B MIN MAX MIN MAX5 A .0532 .0688 1.35 1.75AA1 .0040 .0098 0.10 0.25b .013 .020 0.33 0.518 7 6 5c

PD- 91705AIRF7322D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET1 8and Schottky Diode A KVDSS = -20V Ideal For Buck Regulator Applications 2 7A K P-Channel HEXFETRDS(on) = 0.0583 6S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky Vf = 0.39V SO-8 FootprintTop ViewDescriptionThe FETKY family

IRF7324TRPbF-1HEXFET Power MOSFETVDS -20 V1 8RDS(on) max S1 D10.018 2 7(@V = -4.5V)GSG1 D1Qg (typical) 42 nC3 6S2 D2ID 4 5-9.0 AG2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free En

PD -93799AIRF7324HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8S1 D1VDSS = -20V Dual P-Channel MOSFET2 7G1 D1 Low Profile (

PD -94000IRF7328HEXFET Power MOSFET Trench TechnologyVDSS RDS(on) max ID Ultra Low On-Resistance-30V 21m@VGS = -10V -8.0A Dual P-Channel MOSFET32m@VGS = -4.5V -6.8A Available in Tape & ReelDescription1 8New trench HEXFET Power MOSFETs from S1 D1International Rectifier utilize advanced processing2 7G1 D1techniques to achieve extremely low on-resistance

PD-95309AIRF7324D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7l Ideal for Mobile Phone Applications A Kl Generation V Technology3 6S DRDS(on) = 0.27l SO-8 Footprint45G Dl Lead-FreeSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky diodes offer

PD- 94095IRF7329HEXFET Power MOSFET Trench Technology)VDSS RDS(on) max (m) ID))) Ultra Low On-Resistance17@VGS = -4.5V 9.2A Dual P-Channel MOSFET-12V 21@VGS = -2.5V 7.4A Low Profile (

PD - 93763IRF7326D2 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET1 8and Schottky Diode A KVDSS = -30V Ideal For Buck Regulator Applications 2 7A K P-Channel HEXFETRDS(on) = 0.103 6S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky Vf = 0.52V SO-8 FootprintTop ViewDescriptionThe FETKY family o

PD- 91789IRF7324D1PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7 Ideal for Mobile Phone Applications A K Generation V Technology3 6S DRDS(on) = 0.18 SO-8 Footprint45G DSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottk

PD - 95460IRF7324PbFHEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8S1 D1VDSS = -20V Dual P-Channel MOSFET2 7G1 D1 Low Profile (

PD - 95196AIRF7328PbFHEXFET Power MOSFET Trench TechnologyVDSS RDS(on) max ID Ultra Low On-Resistance-30V 21m@VGS = -10V -8.0A Dual P-Channel MOSFET32m@VGS = -4.5V -6.8AAvailable in Tape & Reel Lead-FreeDescription1 8New trench HEXFET Power MOSFETs from S1 D1International Rectifier utilize advanced processing2 7G1 D1techniques to achieve extremely low

PD - 95042IRF7329PbFHEXFET Power MOSFETl Trench TechnologyVDSS RDS(on) max (mW) IDl Ultra Low On-Resistance17@VGS = -4.5V 9.2Al Dual P-Channel MOSFET-12V 21@VGS = -2.5V 7.4Al Low Profile (

IRF7324TRwww.VBsemi.twDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS