IRF7321D2TRPBF
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7321D2TRPBF
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2.5
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 7.3
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 32
nC
trⓘ -
Время нарастания: 8
ns
Cossⓘ - Выходная емкость: 215
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035(typ)
Ohm
Тип корпуса:
SO8
Аналог (замена) для IRF7321D2TRPBF
IRF7321D2TRPBF
Datasheet (PDF)
..1. Size:909K cn vbsemi
irf7321d2trpbf.pdf 
IRF7321D2TRPBFwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25T
5.1. Size:178K international rectifier
irf7321d2.pdf 
PD- 91667CIRF7321D2TMFETKY MOSFET & Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -30V2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET3 6RDS(on) = 0.062S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky Vf = 0.52V SO-8 FootprintTop ViewDescriptionThe FETKYTM family of Co-package
5.2. Size:208K international rectifier
irf7321d2pbf.pdf 
PD - 95297IRF7321D2PbFTMFETKY MOSFET & Schottky Diodel Co-packaged HEXFET PowerMOSFET and Schottky Diode 1 8A KVDSS = -30Vl Ideal For Buck Regulator Applications2 7A Kl P-Channel HEXFET3 6RDS(on) = 0.062l Low VF Schottky Rectifier S Dl Generation 5 Technology45G Dl SO-8 FootprintSchottky Vf = 0.52Vl Lead-FreeTop ViewDescriptionThe FETKYTM f
8.1. Size:188K international rectifier
irf7322d1pbf.pdf 
PD - 95298IRF7322D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power MOSFET1 8and Schottky Diode K VDSS = -20VAl Ideal For Buck Regulator Applications 2 7A Kl P-Channel HEXFETRDS(on) = 0.0583 6S Dl Low VF Schottky Rectifier45G Dl Generation 5 TechnologySchottky Vf = 0.39Vl SO-8 FootprintTop Viewl Lead-FreeDescriptionThe FETKY family
8.2. Size:225K international rectifier
irf7325.pdf 
PD- 94094IRF7325HEXFET Power MOSFET Trench Technology)VDSS RDS(on) max (m) ID))) Ultra Low On-Resistance -12V 24@VGS = -4.5V 7.8A Dual P-Channel MOSFET33@VGS = -2.5V 6.2A Low Profile (
8.3. Size:334K international rectifier
irf7326d2pbf.pdf 
PD - 95311IRF7326D2PbF Lead-Freewww.irf.com 110/13/04IRF7326D2PbF2 www.irf.comIRF7326D2PbFwww.irf.com 3IRF7326D2PbF4 www.irf.comIRF7326D2PbFwww.irf.com 5IRF7326D2PbF6 www.irf.comIRF7326D2PbFSO-8 (Fetky) Package OutlineINCHES MILLIMETERSDIMD B MIN MAX MIN MAX5 A .0532 .0688 1.35 1.75AA1 .0040 .0098 0.10 0.25b .013 .020 0.33 0.518 7 6 5c
8.4. Size:172K international rectifier
irf7322d1.pdf 
PD- 91705AIRF7322D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET1 8and Schottky Diode A KVDSS = -20V Ideal For Buck Regulator Applications 2 7A K P-Channel HEXFETRDS(on) = 0.0583 6S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky Vf = 0.39V SO-8 FootprintTop ViewDescriptionThe FETKY family
8.5. Size:185K international rectifier
irf7324pbf-1.pdf 
IRF7324TRPbF-1HEXFET Power MOSFETVDS -20 V1 8RDS(on) max S1 D10.018 2 7(@V = -4.5V)GSG1 D1Qg (typical) 42 nC3 6S2 D2ID 4 5-9.0 AG2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free En
8.6. Size:99K international rectifier
irf7324.pdf 
PD -93799AIRF7324HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8S1 D1VDSS = -20V Dual P-Channel MOSFET2 7G1 D1 Low Profile (
8.7. Size:108K international rectifier
irf7328.pdf 
PD -94000IRF7328HEXFET Power MOSFET Trench TechnologyVDSS RDS(on) max ID Ultra Low On-Resistance-30V 21m@VGS = -10V -8.0A Dual P-Channel MOSFET32m@VGS = -4.5V -6.8A Available in Tape & ReelDescription1 8New trench HEXFET Power MOSFETs from S1 D1International Rectifier utilize advanced processing2 7G1 D1techniques to achieve extremely low on-resistance
8.8. Size:134K international rectifier
irf7324d1pbf.pdf 
PD-95309AIRF7324D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7l Ideal for Mobile Phone Applications A Kl Generation V Technology3 6S DRDS(on) = 0.27l SO-8 Footprint45G Dl Lead-FreeSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
8.9. Size:208K international rectifier
irf7329.pdf 
PD- 94095IRF7329HEXFET Power MOSFET Trench Technology)VDSS RDS(on) max (m) ID))) Ultra Low On-Resistance17@VGS = -4.5V 9.2A Dual P-Channel MOSFET-12V 21@VGS = -2.5V 7.4A Low Profile (
8.10. Size:116K international rectifier
irf7326d2.pdf 
PD - 93763IRF7326D2 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET1 8and Schottky Diode A KVDSS = -30V Ideal For Buck Regulator Applications 2 7A K P-Channel HEXFETRDS(on) = 0.103 6S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky Vf = 0.52V SO-8 FootprintTop ViewDescriptionThe FETKY family o
8.11. Size:210K international rectifier
irf7324d1.pdf 
PD- 91789IRF7324D1PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7 Ideal for Mobile Phone Applications A K Generation V Technology3 6S DRDS(on) = 0.18 SO-8 Footprint45G DSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottk
8.13. Size:164K infineon
irf7324pbf.pdf 
PD - 95460IRF7324PbFHEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8S1 D1VDSS = -20V Dual P-Channel MOSFET2 7G1 D1 Low Profile (
8.14. Size:169K infineon
irf7328pbf.pdf 
PD - 95196AIRF7328PbFHEXFET Power MOSFET Trench TechnologyVDSS RDS(on) max ID Ultra Low On-Resistance-30V 21m@VGS = -10V -8.0A Dual P-Channel MOSFET32m@VGS = -4.5V -6.8AAvailable in Tape & Reel Lead-FreeDescription1 8New trench HEXFET Power MOSFETs from S1 D1International Rectifier utilize advanced processing2 7G1 D1techniques to achieve extremely low
8.15. Size:173K infineon
irf7329pbf.pdf 
PD - 95042IRF7329PbFHEXFET Power MOSFETl Trench TechnologyVDSS RDS(on) max (mW) IDl Ultra Low On-Resistance17@VGS = -4.5V 9.2Al Dual P-Channel MOSFET-12V 21@VGS = -2.5V 7.4Al Low Profile (
8.16. Size:1183K cn vbsemi
irf7324tr.pdf 
IRF7324TRwww.VBsemi.twDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
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