IRF7343TRPBF Todos los transistores

 ..1. Size:1246K  cn vbsemi
 irf7343trpbf.pdf

IRF7343TRPBF www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at

 7.1. Size:225K  1
 auirf7343q.pdf

PD - 96343B AUTOMOTIVE MOSFET AUIRF7343Q HEXFET Power MOSFET Features l Advanced Planar Technology N-Ch P-Ch N-CHANNEL MOSFET 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET V(BR)DSS 55V -55V 2 7 G1 D1 l Surface Mount 3 6 l Available in Tape & Reel S2 D2 RDS(on) typ. 0.043 0.095 l 150 C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualif

 7.2. Size:219K  international rectifier
 irf7343pbf.pdf

PD - 92547 IRF7343PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 55V -55V 3 6 S2 D2 l Fully Avalanche Rated 4 5 l Lead-Free G2 D2 P-CHANNEL MOSFET RDS(on) 0.050 0.105 Description Top View Fifth Generation HEXFETs from International Rectifi

 7.3. Size:210K  international rectifier
 irf7343ipbf.pdf

PD - 96088 IRF7343IPbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 55V -55V 3 6 S2 D2 l Fully Avalanche Rated 4 5 l Lead-Free G2 D2 P-CHANNEL MOSFET RDS(on) 0.050 0.105 Description Top View Fifth Generation HEXFETs from International Rectif

 7.4. Size:143K  international rectifier
 irf7343.pdf

PD -91709 IRF7343 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 55V -55V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.050 0.105 Description Top View Fifth Generation HEXFETs from International Rectifier utilize advanced

 7.5. Size:238K  international rectifier
 irf7343qpbf.pdf

PD - 96110 IRF7343QPBF HEXFET Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET N-Ch P-Ch 1 l Ultra Low On-Resistance 8 S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 55V -55V 3 6 l Available in Tape & Reel S2 D2 l 150 C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualified P-CHANNEL MOSFET RDS(on) 0.050 0.105 l Lead-Free To

 7.6. Size:323K  infineon
 auirf7343q.pdf

AUTOMOTIVE GRADE AUIRF7343Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 VDSS 55V -55V Ultra Low On-Resistance 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.043 0.095 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.050 0.105 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 4.7A -3.4A Availabl

 7.7. Size:3361K  cn vbsemi
 irf7343qtr.pdf

IRF7343QTR www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VG