IRF7343TRPBF
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7343TRPBF
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 2
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 4.3
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 13
nC
trⓘ -
Время нарастания: 65
ns
Cossⓘ - Выходная емкость: 75
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028
Ohm
Тип корпуса:
SO8
Аналог (замена) для IRF7343TRPBF
IRF7343TRPBF
Datasheet (PDF)
..1. Size:1246K cn vbsemi
irf7343trpbf.pdf 
IRF7343TRPBFwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at
7.1. Size:225K 1
auirf7343q.pdf 
PD - 96343BAUTOMOTIVE MOSFETAUIRF7343QHEXFET Power MOSFETFeaturesl Advanced Planar TechnologyN-Ch P-ChN-CHANNEL MOSFET1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFETV(BR)DSS55V -55V2 7G1 D1l Surface Mount3 6l Available in Tape & ReelS2 D2RDS(on) typ.0.043 0.095l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualif
7.2. Size:210K international rectifier
irf7343ipbf.pdf 
PD - 96088IRF7343IPbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface Mount VDSS 55V -55V3 6S2 D2l Fully Avalanche Rated45l Lead-Free G2 D2P-CHANNEL MOSFETRDS(on) 0.050 0.105DescriptionTop ViewFifth Generation HEXFETs from International Rectif
7.3. Size:143K international rectifier
irf7343.pdf 
PD -91709IRF7343HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8 Ultra Low On-ResistanceS1 D1 Dual N and P Channel MOSFET2 7G1 D1 Surface Mount VDSS 55V -55V3 6S2 D2 Fully Avalanche Rated45G2 D2P-CHANNEL MOSFETRDS(on) 0.050 0.105DescriptionTop ViewFifth Generation HEXFETs from International Rectifierutilize advanced
7.4. Size:238K international rectifier
irf7343qpbf.pdf 
PD - 96110IRF7343QPBFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETN-Ch P-Ch1l Ultra Low On-Resistance 8S1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 55V -55V3 6l Available in Tape & Reel S2 D2l 150C Operating Temperature45G2 D2l Automotive [Q101] QualifiedP-CHANNEL MOSFETRDS(on) 0.050 0.105l Lead-FreeTo
7.5. Size:219K infineon
irf7343pbf.pdf 
PD - 92547IRF7343PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface Mount VDSS 55V -55V3 6S2 D2l Fully Avalanche Rated45l Lead-Free G2 D2P-CHANNEL MOSFETRDS(on) 0.050 0.105DescriptionTop ViewFifth Generation HEXFETs from International Rectifi
7.6. Size:323K infineon
auirf7343q.pdf 
AUTOMOTIVE GRADE AUIRF7343Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1VDSS 55V -55V Ultra Low On-Resistance 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.043 0.0953 6S2 D2 Dual N and P Channel MOSFET max. 0.050 0.10545G2 D2 Surface Mount P-CHANNEL MOSFETID 4.7A -3.4A Availabl
7.7. Size:3361K cn vbsemi
irf7343qtr.pdf 
IRF7343QTRwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VG
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