IRF7410TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF7410TR
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 235 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0050(typ) Ohm
   Paquete / Cubierta: SO8

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IRF7410TR Datasheet (PDF)

..1. Size:798K cn vbsemi
irf7410tr.pdf

IRF7410TRwww.VBsemi.twP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC0.0100 at VGS = - 1.8 V - 13APPLICATIONS Load Switch Battery SwitchS

7.1. Size:195K international rectifier
irf7410pbf-1.pdf

IRF7410TRPbF-1HEXFET Power MOSFETVDS -12 VA1 8S DRDS(on) max 72 7(@V = -4.5V) DGS SRDS(on) max 3 6S9 m D(@V = -2.5V)GS4 5G DRDS(on) max 13(@V = -1.8V)GSSO-8Top ViewQg (typical) 91 nCID -16 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount T

7.2. Size:208K international rectifier
irf7410gpbf.pdf

PD - 96247IRF7410GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 7m@VGS = -4.5V -16Al Surface Mount9m@VGS = -2.5V -13.6Al Available in Tape & Reel13m@VGS = -1.8V -11.5Al Lead-Freel Halogen-FreeDescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing

7.3. Size:102K international rectifier
irf7410.pdf

PD - 94025IRF7410HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 7m@VGS = -4.5V -16A Surface Mount9m@VGS = -2.5V -13.6A Available in Tape & Reel13m@VGS = -1.8V -11.5ADescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing2 7techniques to achieve the extrem

7.4. Size:210K international rectifier
irf7410pbf.pdf

PD - 96028BIRF7410PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 7m@VGS = -4.5V -16Al Surface Mount9m@VGS = -2.5V -13.6Al Available in Tape & Reel13m@VGS = -1.8V -11.5Al Lead-FreeDescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing2 7techniques

7.5. Size:208K infineon
irf7410gpbf.pdf