All MOSFET. IRF7410TR Datasheet

 

IRF7410TR Datasheet and Replacement


   Type Designator: IRF7410TR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 235 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0050(typ) Ohm
   Package: SO8
 

 IRF7410TR substitution

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IRF7410TR Datasheet (PDF)

 ..1. Size:798K  cn vbsemi
 irf7410tr.pdf pdf_icon

IRF7410TR

IRF7410TRwww.VBsemi.twP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC0.0100 at VGS = - 1.8 V - 13APPLICATIONS Load Switch Battery SwitchS

 7.1. Size:195K  international rectifier
 irf7410pbf-1.pdf pdf_icon

IRF7410TR

IRF7410TRPbF-1HEXFET Power MOSFETVDS -12 VA1 8S DRDS(on) max 72 7(@V = -4.5V) DGS SRDS(on) max 3 6S9 m D(@V = -2.5V)GS4 5G DRDS(on) max 13(@V = -1.8V)GSSO-8Top ViewQg (typical) 91 nCID -16 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount T

 7.2. Size:208K  international rectifier
 irf7410gpbf.pdf pdf_icon

IRF7410TR

PD - 96247IRF7410GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 7m@VGS = -4.5V -16Al Surface Mount9m@VGS = -2.5V -13.6Al Available in Tape & Reel13m@VGS = -1.8V -11.5Al Lead-Freel Halogen-FreeDescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing

 7.3. Size:102K  international rectifier
 irf7410.pdf pdf_icon

IRF7410TR

PD - 94025IRF7410HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 7m@VGS = -4.5V -16A Surface Mount9m@VGS = -2.5V -13.6A Available in Tape & Reel13m@VGS = -1.8V -11.5ADescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing2 7techniques to achieve the extrem

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Datasheet: IRF7324TR , IRF7341TRPBF , IRF7342QTR , IRF7342TR , IRF7343QTR , IRF7343TRPBF , IRF7379TR , IRF7404TR , IRFB7545 , IRF7413TRPBF , IRF7416TRPBF , IRF7424TRPBF , IRF7425TR , IRF7455TR , IRF7463TR , IRF7467TR , IRF7468TR .

History: IRF6645 | AONR62921

Keywords - IRF7410TR MOSFET datasheet

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