IRF7410TR Specs and Replacement

Type Designator: IRF7410TR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 235 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0050 typ Ohm

Package: SO8

IRF7410TR substitution

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IRF7410TR datasheet

 ..1. Size:798K  cn vbsemi
 irf7410tr.pdf pdf_icon

IRF7410TR

IRF7410TR www.VBsemi.tw P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET 0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC 0.0100 at VGS = - 1.8 V - 13 APPLICATIONS Load Switch Battery Switch S ... See More ⇒

 7.1. Size:195K  international rectifier
 irf7410pbf-1.pdf pdf_icon

IRF7410TR

IRF7410TRPbF-1 HEXFET Power MOSFET VDS -12 V A 1 8 S D RDS(on) max 7 2 7 (@V = -4.5V) D GS S RDS(on) max 3 6 S 9 m D (@V = -2.5V) GS 4 5 G D RDS(on) max 13 (@V = -1.8V) GS SO-8 Top View Qg (typical) 91 nC ID -16 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount T... See More ⇒

 7.2. Size:208K  international rectifier
 irf7410gpbf.pdf pdf_icon

IRF7410TR

PD - 96247 IRF7410GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 7m @VGS = -4.5V -16A l Surface Mount 9m @VGS = -2.5V -13.6A l Available in Tape & Reel 13m @VGS = -1.8V -11.5A l Lead-Free l Halogen-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing ... See More ⇒

 7.3. Size:102K  international rectifier
 irf7410.pdf pdf_icon

IRF7410TR

PD - 94025 IRF7410 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 7m @VGS = -4.5V -16A Surface Mount 9m @VGS = -2.5V -13.6A Available in Tape & Reel 13m @VGS = -1.8V -11.5A Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the extrem... See More ⇒

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Detailed specifications: IRF7324TR, IRF7341TRPBF, IRF7342QTR, IRF7342TR, IRF7343QTR, IRF7343TRPBF, IRF7379TR, IRF7404TR, IRFB7545, IRF7413TRPBF, IRF7416TRPBF, IRF7424TRPBF, IRF7425TR, IRF7455TR, IRF7463TR, IRF7467TR, IRF7468TR

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