IRF7478TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF7478TRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL

PD- 96128SMPS MOSFETIRF7478QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl N Channel MOSFET60V 26@VGS = 10V 4.2Al Surface Mount30@VGS = 4.5V 3.5Al Available in Tape & Reell 150C Operating Temperaturel Automotive [Q101] QualifiedAAl Lead-Free1 8S DDescription 2 7S DSpecifically designed for Autom

PD- 94055AIRF7478SMPS MOSFETHEXFET Power MOSFETApplications)VDSS RDS(on) max (m) ID))) High frequency DC-DC converters60V 26@VGS = 10V 4.2A30@VGS = 4.5V 3.5ABenefitsAA1 8S D Low Gate to Drain Charge to Reduce2 7Switching LossesS D Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (See4 5G DA

IRF7478PbF-1SMPS MOSFETHEXFET Power MOSFETAVDS 60 VA1 8S DRDS(on) max 262 7(@V = 10V) S DGSmRDS(on) max 3 6S D30(@V = 4.5V)GS45G DQg (typical) 21 nCID SO-87.0 A Top View(@T = 25C)AApplicationsl High frequency DC-DC convertersFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible wit

AUTOMOTIVE GRADEAUIRF7478QFeatures HEXFET Power MOSFET Advanced Planar Technology AAV(BR)DSS1 8 60V Low On-Resistance S D Logic Level Gate Drive2 7S DRDS(on) typ.20m Dynamic dV/dT Rating3 6S D 150C Operating Temperaturemax. 26m Fast Switching 45G D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 7.0A Top View Lead-Free,

PD- 95280IRF7478PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max (mW) IDl High frequency DC-DC converters60V 26@VGS = 10V 4.2Al Lead-Free30@VGS = 4.5V 3.5ABenefitsAA1 8S Dl Low Gate to Drain Charge to Reduce2 7Switching LossesS Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (See4 5G DApp. Note