IRF7478TR MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7478TR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 6.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO8
IRF7478TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7478TR Datasheet (PDF)
irf7478tr.pdf
IRF7478TRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL
irf7478qpbf.pdf
PD- 96128SMPS MOSFETIRF7478QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl N Channel MOSFET60V 26@VGS = 10V 4.2Al Surface Mount30@VGS = 4.5V 3.5Al Available in Tape & Reell 150C Operating Temperaturel Automotive [Q101] QualifiedAAl Lead-Free1 8S DDescription 2 7S DSpecifically designed for Autom
irf7478.pdf
PD- 94055AIRF7478SMPS MOSFETHEXFET Power MOSFETApplications)VDSS RDS(on) max (m) ID))) High frequency DC-DC converters60V 26@VGS = 10V 4.2A30@VGS = 4.5V 3.5ABenefitsAA1 8S D Low Gate to Drain Charge to Reduce2 7Switching LossesS D Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (See4 5G DA
irf7478pbf-1.pdf
IRF7478PbF-1SMPS MOSFETHEXFET Power MOSFETAVDS 60 VA1 8S DRDS(on) max 262 7(@V = 10V) S DGSmRDS(on) max 3 6S D30(@V = 4.5V)GS45G DQg (typical) 21 nCID SO-87.0 A Top View(@T = 25C)AApplicationsl High frequency DC-DC convertersFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible wit
auirf7478q.pdf
AUTOMOTIVE GRADEAUIRF7478QFeatures HEXFET Power MOSFET Advanced Planar Technology AAV(BR)DSS1 8 60V Low On-Resistance S D Logic Level Gate Drive2 7S DRDS(on) typ.20m Dynamic dV/dT Rating3 6S D 150C Operating Temperaturemax. 26m Fast Switching 45G D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 7.0A Top View Lead-Free,
irf7478pbf.pdf
PD- 95280IRF7478PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max (mW) IDl High frequency DC-DC converters60V 26@VGS = 10V 4.2Al Lead-Free30@VGS = 4.5V 3.5ABenefitsAA1 8S Dl Low Gate to Drain Charge to Reduce2 7Switching LossesS Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (See4 5G DApp. Note
irf7478pbf.pdf
PD- 95280IRF7478PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max (mW) IDl High frequency DC-DC converters60V 26@VGS = 10V 4.2Al Lead-Free30@VGS = 4.5V 3.5ABenefitsAA1 8S Dl Low Gate to Drain Charge to Reduce2 7Switching LossesS Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (See4 5G DApp. Note
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
