IRF7831TR Todos los transistores

 

IRF7831TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7831TR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 195 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 typ Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de IRF7831TR MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRF7831TR datasheet

 ..1. Size:810K  cn vbsemi
 irf7831tr.pdf pdf_icon

IRF7831TR

IRF7831TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

 7.1. Size:264K  international rectifier
 irf7831pbf.pdf pdf_icon

IRF7831TR

PD - 95134B IRF7831PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 3.6m @VGS = 10V 30V 40nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Cu

 7.2. Size:264K  international rectifier
 irf7831.pdf pdf_icon

IRF7831TR

PD - 94636B IRF7831 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 3.6m @VGS = 10V 30V 40nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Curre

 8.1. Size:262K  international rectifier
 irf7832pbf.pdf pdf_icon

IRF7831TR

PD - 95016A IRF7832PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Synchronous MOSFET for Notebook Processor Power 4.0m @VGS = 10V 30V 34nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D l Lead-Free 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 l Fully Chara

MOSTRAR MÁS

Otros transistores... IRF7473TR , IRF7475TRP , IRF7478TR , IRF7751GTR , IRF7807ATR , IRF7811AVTR , IRF7811WTR , IRF7815TR , IRFP460 , IRF7834TRPBF , IRF7842TR , IRF7905TR , IRF8010SP , IRF830ASTRL , IRF830ASTRL-FP , IRF830P , IRF8721TR .

History: SI9410BDY-T1 | 2SK4066-DL-1E

 

 

 

 

↑ Back to Top
.