IRF8010SP Todos los transistores

 

IRF8010SP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF8010SP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

Cossⓘ - Capacitancia de salida: 665 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 typ Ohm

Encapsulados: TO263

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IRF8010SP datasheet

 ..1. Size:1397K  cn vbsemi
 irf8010sp.pdf pdf_icon

IRF8010SP

IRF8010SP www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.010 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 4.5 V 85 D TO-263 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

 0.1. Size:224K  international rectifier
 irf8010spbf.pdf pdf_icon

IRF8010SP

PD - 95433 IRF8010SPbF SMPS MOSFET IRF8010LPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters l UPS and Motor Control VDSS RDS(on) max ID l Lead-Free 100V 15m 80A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-262 D2Pak l Fully C

 0.2. Size:224K  international rectifier
 irf8010lpbf irf8010spbf.pdf pdf_icon

IRF8010SP

PD - 95433 IRF8010SPbF SMPS MOSFET IRF8010LPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters l UPS and Motor Control VDSS RDS(on) max ID l Lead-Free 100V 15m 80A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-262 D2Pak l Fully C

 0.3. Size:224K  international rectifier
 irf8010spbf irf8010lpbf.pdf pdf_icon

IRF8010SP

PD - 95433 IRF8010SPbF SMPS MOSFET IRF8010LPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters l UPS and Motor Control VDSS RDS(on) max ID l Lead-Free 100V 15m 80A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-262 D2Pak l Fully C

MOSTRAR MÁS

Otros transistores... IRF7807ATR , IRF7811AVTR , IRF7811WTR , IRF7815TR , IRF7831TR , IRF7834TRPBF , IRF7842TR , IRF7905TR , IRLZ44N , IRF830ASTRL , IRF830ASTRL-FP , IRF830P , IRF8721TR , IRF8736TR , IRF9310TRPBF-9 , IRF9332TR , IRF9335TRPBF .

History: S-LBSS138LT1G | STD3PK50Z | AO4292E | 30N06G-TF3-T | NTD25P03LG | AGM405AP1 | 2SK3575-S

 

 

 

 

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