IRF8010SP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF8010SP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 665 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01(typ) Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de IRF8010SP MOSFET
IRF8010SP Datasheet (PDF)
irf8010sp.pdf

IRF8010SPwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.010 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V85D TO-263G G D S Top ViewS N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n
irf8010spbf.pdf

PD - 95433IRF8010SPbFSMPS MOSFETIRF8010LPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-262D2Pakl Fully C
irf8010lpbf irf8010spbf.pdf

PD - 95433IRF8010SPbFSMPS MOSFETIRF8010LPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-262D2Pakl Fully C
irf8010spbf irf8010lpbf.pdf

PD - 95433IRF8010SPbFSMPS MOSFETIRF8010LPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-262D2Pakl Fully C
Otros transistores... IRF7807ATR , IRF7811AVTR , IRF7811WTR , IRF7815TR , IRF7831TR , IRF7834TRPBF , IRF7842TR , IRF7905TR , IRFP260N , IRF830ASTRL , IRF830ASTRL-FP , IRF830P , IRF8721TR , IRF8736TR , IRF9310TRPBF-9 , IRF9332TR , IRF9335TRPBF .
History: WTN9973 | KIA840S-220 | BUZ31L | WMM90N08TS | IPI80N06S2-07 | SSF90R1K5S | 2SK1062
History: WTN9973 | KIA840S-220 | BUZ31L | WMM90N08TS | IPI80N06S2-07 | SSF90R1K5S | 2SK1062



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